Glass Lab Publications

Fatemi, M., A. E. Wickenden, et al. (1998). "Enhancement of electrical and structural properties of GaN layers grown on vicinal-cut, a-plane sapphire substrates." Appl. Phys. Lett. 73(5): 608-610.

Henry, R. L. and R. J. Gorman (1987). "Indium phosphide doped with isoelectronic impurities." Inst. Phys. Conf. Ser. 83(Gallium Arsenide Relat. Compd. 1986): 69-74.

Henry, R. L., P. E. R. Nordquist, et al. (1996). "Zone melt growth of GaAs for gamma ray detector applications."Nucl. Instrum. Methods Phys. Res., Sect. A 380(1,2): 30-35.

Henry, R. L., P. E. R. Nordquist, et al. (1991). "Growth of (100) gallium arsenide by vertical zone melting." J. Cryst. Growth 109(1-4): 228-233.

Koleske, D. D., M. E. Twigg, et al. (1999). "Properties of Si-doped GaN films grown using multiple AlN interlayers." Appl. Phys. Lett. 75(20): 3141-3143.

Koleske, D. D., M. E. Twigg, et al. (2000). "The use of AlN interlayers to improve GaN growth on A-plane sapphire." Mater. Res. Soc. Symp. Proc. 587(Substrate Engineering--Paving the Way to Epitaxy): 7 3 1-7 3 7.

Koleske, D. D., A. E. Wickenden, et al. (1998). "Growth model for GaN with comparison to structural, optical, and electrical properties." J. Appl. Phys. 84(4): 1998-2010.

Koleske, D. D., A. E. Wickenden, et al. (1998). "A kinetic model for GaN growth." Mater. Res. Soc. Symp. Proc. 482(Nitride Semiconductors): 167-172.

Koleske, D. D., A. E. Wickenden, et al. (1998). "Enhanced GaN decomposition in H2 near atmospheric pressures." Appl. Phys. Lett. 73(14): 2018-2020.

Koleske, D. D., A. E. Wickenden, et al. (1999). "Enhanced GaN decomposition at MOVPE pressures." Mater. Res. Soc. Symp. Proc. 537(GaN and Related Alloys): G3 70/71-G73 70/77.

Koleske, D. D., A. E. Wickenden, et al. (1999). "Enhanced GaN decomposition in H2 near atmospheric pressures. [Erratum to document cited in CA129:336229]." Appl. Phys. Lett. 75(11): 1646.

Lessoff, H. and R. Gorman (1984). "A eutectic dislocation etch for gallium arsenide." J. Electron. Mater. 13(5): 733-739.

Lessoff, H. and R. Gorman (1989). "The formation of subgrain boundaries in gallium arsenide single crystals." J. Electron. Mater. 18(3): 407-410.

Lessoff, H., W. Tseng, et al. (1988). "Partial dislocations and stacking faults in LEC indium-doped gallium arsenide crystals." Semi-Insul. III-V Mater., Proc. Conf., 5th: 441-446.

Nordquist, P. E. R., Jr., M. L. Gipe, et al. (1989). "Antiphase domains and etching of silicon monocarbide." Mater. Lett. 9(1): 17-20.

Nordquist, P. E. R., R. L. Henry, et al. (1992). "Defects in vertical zone melt (VZM) gallium arsenide." Inst. Phys. Conf. Ser. 120(Gallium Arsenide Relat. Compd. 1991): 61-66.

Nordquist, P. E. R., R. L. Henry, et al. (1990). "Vertical zone melting growth of gallium arsenide." Inst. Phys. Conf. Ser. 112(Gallium Arsenide Relat. Compd. 1990): 49-54.

Nordquist, P. E. R., Jr., R. L. Henry, et al. (1994). "Annealing of GaAs grown by vertical zone melting." J. Cryst. Growth 141(3-4): 343-346.

Nordquist, P. E. R., R. L. Henry, et al. (1994). "Annealing of vertical zone melt GaAs." Semi-Insul. III-V Mater., Proc. Conf., 8th: 47-50.

Nordquist, P. E. R., R. L. Henry, et al. (1993). "Sequential etching of gallium arsenide." J. Cryst. Growth 128(1-4): 483-487.

Nordquist, P. E. R., Jr., H. Lessoff, et al. (1989). "A eutectic hydroxide etch for β-silicon monocarbide." Mater. Lett. 7(9-10): 316-317.

Nordquist, P. E. R., Jr., H. Lessoff, et al. (1989). "A eutectic hydroxide etch for β-silicon monocarbide [Erratum to document cited in CA110(20):183304j]." Mater. Lett. 8(1-2): 71.

Prokes, S. M., R. Gorman, et al. (1991). "Etching studies of stress-induced surface polygonization in SI gallium arsenide wafers." Mater. Lett. 10(9-10): 400-403.

Saban, S. B., J. S. Blakemore, et al. (1992). "Evaluation of local vibrational mode absorption caused by carbon in gallium arsenide." J. Appl. Phys. 72(6): 2505-2507.

Tseng, W. F., H. Lessoff, et al. (1985). "Morphology of defects in gallium arsenide revealed by eutectic etch." J. Electrochem. Soc. 132(12): 3067-3068.

Wickenden, A. E., R. L. Henry, et al. (2000). "The control of GaN microstructure and its impact on device performance." Int. Semicond. Device Res. Symp., 5th: 323-326.

Wickenden, A. E., D. D. Koleske, et al. (1999). "The impact of nitridation and nucleation layer process conditions on morphology and electron transport in GaN epitaxial films." J. Electron. Mater. 28(3): 301-307.

Wickenden, A. E., D. D. Koleske, et al. (2000). "The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys." J. Electron. Mater. 29(1): 21-26.